Hold on tight, the Crucial T705 Gen5 NVMe SSD is taking Gen5 performance to the max. With sequential reads and writes up to 14,500MB/s and 12,700MB/s (up to 1,550K/1,800K IOPS random reads/writes), the T705 offers faster gaming, video editing, 3D rendering and heavy workload application processing. Built with Micron 232-layer TLC NAND and ready for use with your motherboard's heatsink, the Crucial T705 Gen5 SSD is fully optimized for performance, takes full advantage of Microsoft DirectStorage, and is backward compatible with Gen3 and Gen4 motherboards. With SSD speeds faster than Gen4, you'll never look back from the Crucial T705!
Experience the incredible performance of PCIe Gen 5 storage in your system, with unbelievable sequential read and write speeds using the high-bandwidth NVMe 2.0 interface for great performance and longevity.
Being in your element is more than just being good at something, it's finding that perfect balance in everything you do. The Mushkin Element Series is exactly that, a perfect balance of performance, reliability and value significantly improving not just your computing experience over traditional hard drives but allowing you to do more in your element. In addition to Mushkin enhanced performance, an Element Series upgrade promotes cooler, quieter and more energy-efficient conditions compared to traditional mechanical hard drives. With no moving parts, SSDs provide peace of mind with their superior durability and reliability.
solid state drive - 512 GB - SATA 6Gb/s Type: Solid state drive - internal maht: 512 GB NAND Flash mälu tüüp: Single-level cell (SLC) Form Factor: M.2 2280 liides: SATA 6Gb/s Data Transfer Rate: 600 MBps Features: Native Command Queuing (NCQ), TRIM tugi, Error Correction Code (ECC), Intel Smart Response Technology(ISRT), SLC cache, S.M.A.R.T. mõõtmed (WxDxH): 22 mm x 80 mm x 3.5 mm kaal: 8 g Manufacturer Warranty: 3-year garantii
NVME M.2 PCIe Gen4|Write speed 1750 MBytes/sec|Read speed 4500 MBytes/sec|MTBF 2000000 hours. A specialist data center product, this cutting-edge solution offers up to 190,000 IOPS random write time and 6950 MB/S sequential read, as well as up to 50% faster restart times compared to its predecessor. It’s also available in a range of form factors, including M.2, U.2 and E1.S. Providing significant improvements for those needing high end storage, there’s plenty to attract growing data centers that want to create value.
